Stress Analysis in
Micro Areas of LSIs Using Raman Microprobe
Tadashi Ito, Hirozumi Azuma, Shoji Noda
Stress distributions
near the TiSi2 patterns and near the
local-oxidation-of silicon ( LOCOS ) isolation in
a fine LSI were estimated by means of Raman spectroscopy.
Tensile stress beside the TiSi2 patterns
reaches a maximum value of 150 - 350MPa, and is
expected to remain about 100MPa even when the pattern
size is reduced to several µm. At the edge
of the LOCOS isolation there exists strss variation
between 1 and 100MPa.
