This paper reports the results of the research on silicon carbide (SiC) semiconductor material. SiC is a promissing material for low leakage devices and a candidate for novel high power device development. The results obtained are summarized below.

1. One-inch-size 4H-SiC single crystals have been grown by a sublimation method. The etch pit density of the crystals is in the range of 10⁴-10⁵cm^-2.

2. By using internally-built chemical vapor deposition apparatus, 3C-SiC, heteroepitaxial-growth on Si(100), 4H-SiC homoepitaxial-growth, and 6H-SiC homoepitaxial-growth have been achieved.

3. By using nitrogen-hot-ion-implantation process with substrate heating at 750��, SiC MOSFETs have been fabricated. 6H-SiC MOSFETs have operated even at 500°C and 3C-SiC MOSFETs have operated at 400°C.

4. Au/6H-SiC schottky diodes have been fabricated and a breakdown electric field of 1.3 MV/cm has been obtained, which is about five times stronger than 0.25 MV/cm in Si material for 1000 V breakdown design. The Au/6H-SiC shottky diode showed 700 V breakdown voltage. SiC-thermal-oxide exhibited a dielectric breakdown field of 8 MV/cm, which is as high as that of Si thermal oxide.