Polycrystalline Si films are a promising structural material for microsensing devices. On its application, mechanical fatigue phenomena may be worrying in view of long-term reliability. For revealing its mechanism, it is necessary to understand the structural behavior of its correlative grain-boundaries (GBs). In the present study, using an admittance spectroscopy technique, we have systematically clarified the formation process and the thermally induced behavior of interface states of GBs in chemical vapor deposited amorphous films during thermal annealing. As a unique trial, we have also investigated the correlation between the GB states and the mechanical properties using the polycrystalline Si membranes. The results indicate that a deeper energy shift of the GB states is caused by an external stress and that its quantity depends on Young's modulus of the films. We expect that our findings contribute to the solution of fatigue problems of polycrystalline Si films in the near future.
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