Technical Journal R&D Review
Abstract : Vol.41No.2(2006.6)
Special Issue:Processing Design of Single Crystals and Textured Polycrystals for Advanced Electronic Devices
Review
 
P.1 Processing Design of Single Crystals and Textured Polycrystals for Advanced Electronic Devices
   

Toshihiko Tani

 

 

Development of high performance materials with environmental compatibility has been strongly desired for electronic device elements. One of the strategies is the design of a novel processing method to produce a material with the optimum microstructure for enhanced physical properties. Examples are shown as recently developed processing techniques; a single crystal growth method to dramatically decrease the dislocation density of compound semiconductors, and a texture engineering method to enhance anisotropic properties of polycrystals.

 

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Research Reports
 
P.5
   

Daisuke Nakamura, Itaru Gunjishima,
Satoshi Yamaguchi, Tadashi Ito,
Atsuto Okamoto, Hiroyuki Kondo,
Shoichi Onda, Kazumasa Takatori

 

 

Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices.1, 2) Careful consideration of the thermal conditions3-6) in which SiC {0001} is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes),7-9) inclusions, small-angle boundaries and long-range lattice warp has been reduced.10,11) But some macroscopic defects (about 1-10 cm-2) and a large density of elementary dislocations (~104 cm-2), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (Refs. 12-16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth),17) to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems.

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P.11 Design of Grain Oriented Microstructure by the Monte Carlo Simulation of Sintering and Isotropic Grain Growth
   

Hiroshi Itahara, Hiroshi Nomura,
Toshihiko Tani, Hideaki Matsubara

 

 

Fabrication of dense and highly textured ceramics is significantly important for the improvement of their anisotropic properties by the templated grain growth (TGG) method. Monte Carlo simulation based on the Potts model was carried out through computation for the design of TGG processing, in which anisometric template particles are mixed with fine matrix particles and organic binder and aligned by tape casting before heat treatment. Thus, four initial parameters affecting the microstructure after sintering with isotropic grain growth were investigated; 1) mixing ratio of template/matrix particles, 2) size and 3) aspect ratio of the template particles, and 4) initial porosity (caused by the removal of binder). The fraction of oriented grains in the simulated microstructure was found to increase with increasing template/matrix mixing ratio and aspect ratio of template, and with decreasing template size and initial porosity. The residual porosity was shown to decrease with decreasing template/matrix mixing ratio and template size, and with decreasing initial porosity. The study suggests that computational design would give a guiding principle in terms of the initial preparation conditions for the ceramics having both a large fraction of oriented grains and low residual porosity.

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P.22 High Performance Lead-free Piezoelectric Material
   

Yasuyoshi Saito, Hisaaki Takao,
Toshihiko Tani, Tatsuhiko Nonoyama,
Kazumasa Takatori, Takahiko Homma,
Toshiatsu Nagaya, Masaya Nakamura

 

 

Lead has recently been expelled from many commercial applications and materials (for example, from solder, glass and pottery glaze) owing to concerns regarding its toxicity. Lead zirconium titanate (PZT) ceramics are high-performance piezoelectric materials, which are widely used in sensors, actuators and other electronic devices; they contain more than 60 weight per cent lead. Although there has been a concerted effort to develop lead-free piezoelectric ceramics, no effective alternative to PZT has yet been found.1-14) Here we report a lead-free piezoelectric ceramic with an electric-field-induced strain comparable to typical actuator-grade PZT. We achieved this through the combination of the discovery of a morphotropic phase boundary in an alkaline niobate-based perovskite solid solution, and the development of a processing route leading to highly <001> textured polycrystals. The ceramic exhibits a piezoelectric constant
d
33 (the induced charge per unit force applied in the same direction) of above 300 picocoulombs per newton (pC N-1), and texturing the material leads to a peak d33 of 416 pC N-1. The textured material also exhibits temperature-independent field-induced strain characteristics.

 

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P.29 Elucidation of the Formation Mechanism of a Textured Ceramic of a P-type Thermoelectric Layered Oxide [Ca2CoO3]0.62[CoO2]
   

Hiroshi Itahara, Won-Seon Seo,
Sujeong Lee, Hiroshi Nozaki,
Toshihiko Tani, Kunihito Koumoto

 

 

The reactive-templated grain growth (RTGG) method is a powerful fabrication technique for producing textured ceramics having enhanced performance compared to those of conventionally prepared non-textured ceramics, for various functional materials. Its wide applicability is demonstrated by the fact that the RTGG method using β-Co(OH)2 templates gave textured ceramics of p-type thermoelectric layered cobaltites having various compositions. The orientation degree of a prepared ceramic, which influences its performance, depends on the composition of the ceramic. Thus, in order to determine general guidelines for the production of a highly textured ceramic, we analyzed the formation mechanism of the model system [Ca2CoO3]0.62[CoO2] (CCO: Ca2CoO3 layer + CoO2 layer) ceramic on β-Co(OH)2 templates by using high-temperature X-ray diffraction (XRD), pole figure, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). We demonstrated that a textured CCO ceramic is formed through a series of in-situ topotactic conversions via intermediate phases with a preserved CoO2 layer of β-Co(OH)2 templates. In general, we showed, for the first time, that 'a reaction design with partially preserved crystallographic similarities' is essential for the fabrication scheme of a highly textured ceramic with enhanced performance.

 

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P.37 Thermoelectric Properties of Highly Textured Ca-doped
(ZnO)mIn2O3 Ceramics
   

Hisashi Kaga, Ryoji Asahi, Toshihiko Tani

 

Highly textured Ca-doped (ZnO)mIn2O3 (m is an integer) ceramics were fabricated by the reactive templated grain growth (RTGG) method and their thermoelectric properties were examined. Platelike ZnSO4 ・3Zn(OH)2 particles were used as reactive templates and mixed with
In2O3 and CaCO3 powders into a stack of tapes. In situ formation and subsequent sintering resulted in textured Ca-doped (ZnO)mIn2O3 ceramics. The electrical conductivity of the textured specimen along the ab-plane was almost two times larger than that of the textured specimen along the c-axis and about 30% larger than that of a nontextured specimen. On the other hand, the Seebeck coefficients of the textured specimen exhibited a small anisotropy. The thermal conductivity of the RTGG specimen along the ab-plane was higher than that of the RTGG specimen along the c-axis. However, both specimens showed similar values at high temperatures. As a result, the Ca-doped specimen along the ab-plane with a composite phase of (ZnO)3In2O3 and (ZnO)4In2O3 showed a ZT value of 0.31 (at 1053 K), compared with 0.23 (at 1053 K) for the nontextured specimen.

 

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