[ Theme ] Piezoresistive Semiconductor Pressure Sensor
[ Award Date ] Mar. 21, 2013
"One Step on Electro-Technology" was established in 2008 by the Institute of Electrical Engineers of Japan to commemorate the historical technical achievements in electrotechnology and contribute to its future development. This sensor was selected as the sixth "One Step on Electro-Technology" in 2013.
The first piezoresistive semiconductor pressure sensor was invented by our company in 1964.
This sensor has a 3D structure with a silicon diaphragm, which is now in wide use, and was developed during the 1970’ s and subsequently commercialized. This sensor was fabricated using microelectromechanical systems (MEMS) technology and is now recognized as a typical device in this field, although a remarkable example of world-class pioneering in MEMS technology.
