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REPRESENTATIVE RESEARCH RESULTS
PROJECT
Undertaking the Challenge of Transforming Energy Systems to Achieve a Carbon-neutral Society
Realizing a Sustainable, Circular Mobility Society
Creating Forms of Manufacturing for the Next Generation
Human Centered Space Design for Well-being
Creating the Future of Mobility Leading to Next Generations
Conceiving Breakthroughs Ahead of Their Time
CORE TECHNOLOGY AREA
We have succeeded in achieving the growth of ultrahigh quality silicon carbide (SiC) single crystals using a repeated a-face (RAF) growth method. The crystal quality of conventional SiC substrates, in which a large density of crystalline defects are present, is one of the biggest problems that has hampered the realization of high-performance SiC-based electric devices that can simultaneously satisfy requirements such as high-power, high-reliability, and low-loss characteristics. We have proposed a novel method, a RAF growth method, which effectively reduces crystal defects and has realized world-first high-quality SiC crystals without micropipe defects (referred to as killer defects), in addition to obtaining a lower density of dislocations (by two to three orders than those of conventional-quality SiC substrates) by which crystalline lattice distortion can be completely removed. These results were published in the journal Nature in 2004.
"Ultrahigh Quality Silicon Carbide Single Crystals", Nature, Vol. 430 (2004), pp. 1009-1012 (DOI:10.1038/nature02810)