Energy Level of Color Centers at Insulator/SiC Interfaces

A study conducted by Haruko Toyama et al., in collaboration with Graduate School of Engineering Osaka University was published in the APL Materials.

Quantum technology, such as quantum computers, has the potential to bring about major changes in society in the future. SiC is a promising candidate of quantum materials because it can utilize mature microfabrication process technology. Since the color centers in SiC function as single photon sources, their application to quantum computing and quantum communication has been proposed. Highly bright color centers were found at the interface between insulator (SiO2) and SiC compared to diamond NV centers. However, their origin remain unknown.

In the present study, we investigated the luminescence and electrical properties of the SiO2/SiC interfaces, and revealed that interface color centers have a specific energy level. Our experimental findings pave the way towards understanding the microscopic origin of color centers at SiO2/SiC interfaces.

For more information on this research, please see the press release (in Japanese) from Osaka University. https://resou.osaka-u.ac.jp/ja/research/2025/20250228_1

Title: Insight into the Energy Level Structure and Luminescence Process of Color Centers at SiO2/SiC Interfaces
Authors: Onishi, K., Nakanuma, T., Toyama, H., Tahara, K., Kutsuki, K., Watanabe, H., Kobayashi, T.
Journal Name: APL Materials
Published: February 27, 2025
https://doi.org/10.1063/5.0253294